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| SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE ISSUE 2 - JANUARY 1998 FEATURES * VHF to UHF operation * Common Cathode Dual Diode * Monolithic construction APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators PARTMARKING DETAIL ZDC833A - C2A PIN CONFIGURATION 1 ZDC833A 2 1 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS.(Each Diode) PARAMETER Forward Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg VALUE 200 330 -55 to +150 UNIT mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C ). (Each Diode) PARAMETER Reverse Breakdown Voltage Reverse Leakage Current Temperature Coefficient Diode Capacitance Capacitance Ratio Figure of Merit SYMBOL V BR MIN. 25 TYP. MAX. UNIT V CONDITIONS. I R = 10A V R = 20V IR 0.2 10 nA 400 ppm/C V R = 3V, f=1MHz Cd Cd / Cd Q 29.7 5.0 200 33 36.3 6.5 pF V R = 2V, f=1MHz V R = 2V/20V, f=1MHz V R = 3V, f=50MHz ZDC833A TYPICAL CHARACTERISTICS Temp. Coefficient (PPM/ C) 100 1200 Tj = 25 to 125C Capacitance (pF) 800 10 400 1 0.1 1 10 100 0 0.1 1 10 100 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Capacitance v Reverse Voltage Temp. Coefficient v Reverse Voltage |
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